Tungsten Copper Thermal Substrate
High-density W–Cu heat spreading substrates for power & RF devices — PM sintering-infiltration plates, blocks and spreader blanks with tailored CTE, tight tolerances and minimal warpage for hermetic packaging.
- Materials
- Tungsten copper (W–Cu)
- Features
- High thermal conductivity, tailored CTE matching Si/GaN/GaAs/SiC, high-temperature stability, PM dimensional accuracy, Ni/Au plating & direct bonding compatible
- Application
- Power semiconductor modules (IGBT, MOSFET, SiC/GaN), RF & microwave systems, high-power LED and laser bases, hermetically sealed aerospace/defense/industrial packages, precision electronics.
Frequently Asked Questions
What materials and process are used for Tungsten Copper Thermal Substrate?
Tungsten Copper Thermal Substrate is made from Tungsten copper (W–Cu) and is formed by MIM/PM (metal injection molding / powder metallurgy) near-net-shape and sintered to a relative density of ≥ 98%, which keeps mechanical properties close to wrought material.
What tolerances can Tungsten Copper Thermal Substrate hold?
Typical as-sintered dimensional tolerance is ±0.3–0.5% of the dimension. Tighter tolerances are achievable with secondary sizing or machining, agreed per part during quoting.
What is the MOQ and lead time for Tungsten Copper Thermal Substrate?
MOQ is 1000 pcs. Mold lead time is about 20 days (mold fee typically RMB 20–40k depending on part geometry), and production lead time is about 7 days once the mold is validated; secondary processing adds 3–5 days.
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