Tungsten Copper Substrate — tungsten-copper-substrate-d01.jpg

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Tungsten Copper Substrate

High-integrity W–Cu substrates for devices generating intense localized heat — laser diode stacks, power modules, RF circuits and photonics equipment, with thin high-strength profiles and multilevel PM/MIM geometries.

Materials: Tungsten copper (W–Cu)
Features: Low thermal resistance with sustained flatness, strength at thinner profiles, multilevel/recessed/stepped geometries, Ni/Au & Ni/Ag plating, vacuum brazing and mirror-lapping compatible
Application: Laser diode arrays, optical pumping modules and beam-combining units, IGBT / high-current power modules, RF/microwave circuits, military and aerospace photonics platforms, compact power control systems.

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FAQ

Frequently Asked Questions

What materials and process are used for Tungsten Copper Substrate?

Tungsten Copper Substrate is made from Tungsten copper (W–Cu) and is formed by MIM/PM (metal injection molding / powder metallurgy) near-net-shape and sintered to a relative density of ≥ 98%, which keeps mechanical properties close to wrought material.

What tolerances can Tungsten Copper Substrate hold?

Typical as-sintered dimensional tolerance is ±0.3–0.5% of the dimension. Tighter tolerances are achievable with secondary sizing or machining, agreed per part during quoting.

What is the MOQ and lead time for Tungsten Copper Substrate?

MOQ is 1000 pcs. Mold lead time is about 20 days (mold fee typically RMB 20–40k depending on part geometry), and production lead time is about 7 days once the mold is validated; secondary processing adds 3–5 days.