



Tungsten Copper IC Packaging
W–Cu IC packaging substrates for power semiconductor chips, RF amplifiers and hermetic device carriers — PM/MIM parts with micro-channels, stepped regions and cavity structures, CTE-tunable to Si, SiC, GaN or GaAs.
- Materials
- Tungsten copper (W–Cu)
- Features
- Copper-phase high conductivity with tungsten-phase rigidity, CTE tunability, uniform void-free microstructure, Ni/Au, Ag, Cu and ENEPIG metallization compatible
- Application
- High-power switching devices, RF transistor carriers for base stations, defense-grade hermetic microwave modules, high-temperature SiC/GaN power stages, precision hybrid circuits.
Frequently Asked Questions
What materials and process are used for Tungsten Copper IC Packaging?
Tungsten Copper IC Packaging is made from Tungsten copper (W–Cu) and is formed by MIM/PM (metal injection molding / powder metallurgy) near-net-shape and sintered to a relative density of ≥ 98%, which keeps mechanical properties close to wrought material.
What tolerances can Tungsten Copper IC Packaging hold?
Typical as-sintered dimensional tolerance is ±0.3–0.5% of the dimension. Tighter tolerances are achievable with secondary sizing or machining, agreed per part during quoting.
What is the MOQ and lead time for Tungsten Copper IC Packaging?
MOQ is 1000 pcs. Mold lead time is about 20 days (mold fee typically RMB 20–40k depending on part geometry), and production lead time is about 7 days once the mold is validated; secondary processing adds 3–5 days.
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