Tungsten Copper Electronic Package Housing — tungsten-copper-electronic-package-housing-d04.jpg

Tungsten Copper Electronic Package Housing — tungsten-copper-electronic-package-housing-d01.jpg

Tungsten Copper Electronic Package Housing

W–Cu electronic package housings for high-power semiconductor modules, RF devices and hermetically sealed electronics — PM near-net-shape housings with CTE tailored to Si, GaN, GaAs and SiC.

Materials: Tungsten copper (W–Cu)
Features: High thermal conductivity, tailored CTE matching, dimensional stability under thermal cycling, high density & strength, reliable hermetic sealing
Application: Power semiconductor modules (IGBT, MOSFET, GaN, SiC), microwave/RF modules, laser and optical modules, hermetically sealed aerospace, defense and industrial electronics.

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FAQ

Frequently Asked Questions

What materials and process are used for Tungsten Copper Electronic Package Housing?

Tungsten Copper Electronic Package Housing is made from Tungsten copper (W–Cu) and is formed by MIM/PM (metal injection molding / powder metallurgy) near-net-shape and sintered to a relative density of ≥ 98%, which keeps mechanical properties close to wrought material.

What tolerances can Tungsten Copper Electronic Package Housing hold?

Typical as-sintered dimensional tolerance is ±0.3–0.5% of the dimension. Tighter tolerances are achievable with secondary sizing or machining, agreed per part during quoting.

What is the MOQ and lead time for Tungsten Copper Electronic Package Housing?

MOQ is 1000 pcs. Mold lead time is about 20 days (mold fee typically RMB 20–40k depending on part geometry), and production lead time is about 7 days once the mold is validated; secondary processing adds 3–5 days.