TO-Pedestal
Tungsten–copper & copper pedestals for TO-can power device packaging — PM sintered, infiltrated and CNC-machined bases ensuring heat conduction, hermetic sealing and dimensional stability for TO-3/TO-5/TO-18/TO-220 modules.
- Materials
- Tungsten copper (W–Cu), pure copper
- Features
- High thermal conductivity, optimized CTE for die attachment & hermetic sealing, high strength under continuous thermal loading, Ni/Au plating & brazing-ready
- Application
- TO-package power transistors, diodes, photodiodes & high-power LEDs, RF & microwave components, sensor modules, compact high-power electronics.
Frequently Asked Questions
What materials and process are used for TO-Pedestal?
TO-Pedestal is made from Tungsten copper (W–Cu), pure copper and is formed by MIM/PM (metal injection molding / powder metallurgy) near-net-shape and sintered to a relative density of ≥ 98%, which keeps mechanical properties close to wrought material.
What tolerances can TO-Pedestal hold?
Typical as-sintered dimensional tolerance is ±0.3–0.5% of the dimension. Tighter tolerances are achievable with secondary sizing or machining, agreed per part during quoting.
What is the MOQ and lead time for TO-Pedestal?
MOQ is 1000 pcs. Mold lead time is about 20 days (mold fee typically RMB 20–40k depending on part geometry), and production lead time is about 7 days once the mold is validated; secondary processing adds 3–5 days.
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